| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
BSC020N03LS
|
INFINEON |
10+ |
TDSON-8 |
30.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD |
|
BSC020N03MS
|
INFINEON |
10+ |
TDSON-8 |
30.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD |
|
BSC025N03MS
|
INFINEON |
2011+ |
TDSON-8 |
N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; |
|
BSC027N03S
|
INFINEON |
2011+ |
TDSON-8 |
N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; |
|
BSC060N10NS3
|
INFINEON |
2011+ |
TDSON-8 |
N通道100.0 V 90.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm; |
|
BSC057N08NS3G
|
INFINEON |
2011+ |
TDSON-8 |
N通道,80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS |
|
BSC100N03LSG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,30.0 V 44.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
|
BSC100N03MSG
|
INFINEON |
10+ |
TDSON-8 |
N通道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; |
|
BSC090N03LSG
|
INFINEON |
10+ |
TDSON-8 |
N通道 30.0 V 47.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD |
|
BSC047N08NS3G
|
INFINEON |
10+ |
TDSON-8 |
N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS |
|
BSC080N03MSG
|
INFINEON |
10+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2 |
|
BSC057N03LSG
|
INFINEON |
2011+ |
TDSON-8 |
30.0 V 73A N通道,场效应管 |
|
BSC057N03MSG
|
INFINEON |
2011+ |
TDSON-8 |
30.0 V 73A N通道,场效应管 |
|
BSC059N03SG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS ( |
|
BSC031N06NS3G
|
INFINEON |
2011+ |
TDSON-8 |
N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS ( |
|
BSC100N10NSFG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD |
|
BSC082N10LSG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,100.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD |
|
BSC020N03LSG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
|
BSC020N03MSG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
|
BSC022N03SG
|
INFINEON |
2011+ |
TDSON-8 |
N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |