| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
FDMS5352
|
FAIRCHILD |
2010+ |
QFN8 |
60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel |
|
FDMS8460
|
FAIRCHILD |
2010+ |
QFN8 |
40V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel |
|
NDS7002A
|
FAIRCHILD |
2010+ |
SOT23-3 |
N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应管) |
|
MMBF170
|
FAIRCHILD |
2010+ |
SOT-23 |
N沟道增强模式场效应管(不适用马鞍山沟道增强型场效应管) |
|
FDMS3672
|
FAIRCHILD |
2010+ |
QFN-56 |
N沟道UltraFET沟道MOSFET 100V的,22A条,23mohm |
|
FDN360P
|
FAIRCHILD |
2010+ |
SOT-23 |
Single P-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
|
FDN361BN
|
FAIRCHILD |
2010+ |
SOT23-3 |
30V N-Channel, Logic Level, PowerTrench MOSFET |
|
FDMS7692
|
FAIRCHILD |
2010+ |
PQFN8 |
30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
|
FDS6681Z
|
FAIRCHILD |
2010+ |
SOP-8 |
30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
|
NDS9957
|
FAIRCHILD |
2010+ |
SOP-8 |
Dual N-Channel Enhancement Mode Field Effect Transistor(2.6A,60V,0.16Ω)(双N沟道增强型场效应管(漏电流2.6A, 漏源电压60V,导通电阻0.16Ω)) |
|
HUFA76413DK8T
|
FAIRCHILD |
2010+ |
SOP-8 |
N沟道逻辑电平UltraFET功率MOSFET 60V的4.8A,56mз |
|
FDS9945
|
FAIRCHILD |
2010+ |
SOP-8 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel |
|
FDMS2572
|
FAIRCHILD |
2010+ |
QFN-56 |
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
|
SFP9540
|
FAIRCHILD |
2010+ |
TO-220 |
P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管) |
|
RFP70N06
|
FAIRCHILD |
2010+ |
TO-220 |
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail |
|
RFD16N05LSM
|
FAIRCHILD |
2010+ |
TO-252 |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管) |
|
RFD14N05LSM9A
|
FAIRCHILD |
2010+ |
TO-252 |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
RFD14N05LSM
|
FAIRCHILD |
2010+ |
TO-252 |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
RFD14N05L
|
FAIRCHILD |
2010+ |
TO-251 |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
NDT451AN
|
FAIRCHILD |
2010+ |
SOT-223 |
N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N沟道增强型场效应管(漏电流7.2A, 漏源电压30V,导通电阻0.035Ω)) |