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PH8230E
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PH8230E

  • 所属类别：场效应管
  • 产品名称：N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
  • 厂商：NXP
  • 生产批号：10+
  • 封装：SOT-669
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找PH8230E的pdf资料
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  • 产品介绍

PH8230E    N-沟道场效应晶体管逻辑电平TrenchMOS    N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 30 V

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型号 厂商 批号 封装 说明
PH8230E NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3

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