Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
K4T1G084QE-HCE7 |
SAMSUNG |
12+ |
BGA |
DDR2 memory |
K4T1G084QE |
SAMSUNG |
11+ |
BGA |
DDR |
SPMWHT221MD5WAT0S0 |
Samsung |
10+ |
[A1T2S2] |
Junction voltage 2.8-2.9V, color temperature 4000K, luminous flux 24.10-27.72 (lumens) at 65 (mA) |
CL21B474KOFNNNF |
SAMSUNG |
10+ |
|
SURFACE MOUNT MONO CERAMIC CAP |
CL21B102KBANNNC |
SAMSUNG |
10+ |
|
SURFACE MOUNT MONO CERAMIC CAP |
CL21B473KBCNNNC |
SAMSUNG |
10+ |
|
SURFACE MOUNT MONO CERAMIC CAP |
CL31C270JBCNNNC |
SAMSUNG |
10+ |
|
SURFACE MOUNT MONO CERAMIC CAP |
CL31B105KOFNNNE |
SAMSUNG |
10+ |
|
HIGH CV CERAMIC CHIP CAPS |
CL03A105MQ3CSNH |
SAMSUNG |
10+ |
|
HIGH CV CERAMIC CHIP CAPS |
CL21B104KACNNNC |
SAMSUNG |
10+ |
SMD |
CAP, 0.1UF 50V CERM CHIP, 0805 Z5U |
CL31A476MQHNNNE |
SAMSUNG |
10+ |
SMD |
SILICON TRANSISTORS |
CL10C220JB8NNNC |
SAMSUNG |
10+ |
NA |
CAP SMT 22PF 50V 5% NPO 0603 |
CL10B105KO8NNNC |
Samsung |
10+ |
SMD |
1NF 50V X7R CAPACITY, CERAMIC CMS0603 |
CL32A106KATLNNE |
SAMSUNG |
10+ |
|
: INDUCTORS FOR POWER LINE SMD |
CL31A226MQHNNNE |
SAMSUNG |
10+ |
SMD |
SILICON TRANSISTORS |
CL05B103KO5NNNC |
SAMSUNG |
10+ |
SMD |
CAP. CER .01MFD 16V 10% X7R |
CL05B104KO5NNNC |
SAMSUNG |
10+ |
SMD |
CAP,SMT,0402,100N,10%,16V,X7R |
CL31B475KAHNNNE |
SAMSUNG |
10+ |
|
CAPACITOR, 0.47UF/25V 1206 20% |
CL32B226MQJNNNE |
SAMSUNG |
10+ |
SMD |
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |
CL21A475KPFNNNE |
SAMSUNG |
10+ |
SMD |
CAP 22PF 50V 5% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN |